- 您现在的位置：买卖IC网 > Sheet目录488 > NTF3055L108T3LFG (ON Semiconductor)MOSFET N-CH 60V 3A SOT223
NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
1000
V DS = 0 V
V GS = 0 V
T J = 25 ° C
6
5
Q T
800
C iss
V GS
600
400
C rss
C iss
4
3
2
Q 1
Q 2
200
0
10
5 V GS 0 V DS 5
10
C oss
C rss
15
20
25
1
0
0
1
2
3
4
5
6
I D = 3 A
T J = 25 ° C
7
8
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
1000
V DS = 30 V
I D = 3 A
V GS = 5 V
3.2
2.8
2.4
V GS = 0 V
T J = 25 ° C
100
t r
2
10
t f
t d(off)
t d(on)
1.6
1.2
0.8
0.4
1
1
10
100
0
0.54
0.58
0.62 0.66
0.7
0.74 0.78 0.82 0.86 0.9
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
10
1
100 m s
10 ms
80
70
60
I D = 7 A
0.1
1 ms
50
40
V GS = 20 V
SINGLE PULSE
dc
30
0.01
0.001
0.1
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
100
1000
20
10
0
25
50
75
100
125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTF3055L175T1
MOSFET N-CH 60V 2A SOT223
NTF5P03T3G
MOSFET P-CH 30V 3.7A SOT223
NTF6P02T3G
MOSFET PWR P-CHAN 10A 20V SOT223
NTGD3133PT1G
MOSFET P-CH DUAL 20V 21.5A 6TSOP
NTGD3147FT1G
MOSFET P-CH 20V 2.2A 6-TSOP
NTGD3148NT1G
MOSFET N-CH DUAL 20V 3.5A 6TSOP
NTGD3149CT1G
MOSFET COMPL 20V DUAL 6-TSOP
NTGD4161PT1G
MOSFET P-CH DUAL 30V 2.3A 6-TSOP
相关代理商/技术参数
NTF3055L175
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1
功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T1G
功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3
功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3G
功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3LF
功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTF3055L175T3LFG
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level
NTF3226E
制造商:SRNTEL 功能描述: